Datasheet > SiHA6N80AE

SiHA6N80AE

更新时间： 2024-11-07 14:54:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	161K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHA6N80AE 数据手册

SiHA6N80AE

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

Thin-Lead TO-220 FULLPAK

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Integrated Zener diode ESD protection

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

850

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.826

Q_gmax. (nC)

22.5

_gs(nC)

_gd(nC)

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

SiHA6N80AE-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

800

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

3.2

Pulsed drain current ^a

I_DM

Linear derating factor

0.24

20.3

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

Soldering recommendations (peak temperature) ^c

E_AS

P_D

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

0.4

260

°C

Mounting torque, M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 1.2 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 100 A/μs, starting T_J= 25 °C

e. Limited by maximum junction temperature

S20-0344-Rev. B, 11-May-2020

Document Number: 92298

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与SiHA6N80AE相关器件

型号	品牌	获取价格	描述	数据表
SiHA6N80E	VISHAY	获取价格	E Series Power MOSFET
SiHB053N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB055N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHB065N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB068N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHB080N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB085N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHB100N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB100N65E	VISHAY	获取价格	E Series Power MOSFET
SiHB105N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode