Datasheet > SiHA22N60EF

SiHA22N60EF

更新时间： 2024-09-17 14:55:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	155K
描述
EF Series Power MOSFET With Fast Body Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHA22N60EF 数据手册

SiHA22N60EF

Vishay Siliconix

www.vishay.com

EF Series Power MOSFET With Fast Body Diode

FEATURES

Thin-Lead TO-220 FULLPAK

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.158

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- Welding

- Induction heating

Configuration

Single

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

SiHA22N60EF-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.26

144

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

Soldering recommendations (peak temperature) ^c

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

260

°C

Mounting torque, M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 3.2 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 400 A/μs, starting T_J= 25 °C

e. Limited by maximum junction temperature

S19-0120-Rev. A, 04-Feb-2019

Document Number: 92250

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与SiHA22N60EF相关器件

型号	品牌	获取价格	描述	数据表
SiHA22N60EL	VISHAY	获取价格	EL Series Power MOSFET
SiHA240N60E	VISHAY	获取价格	E Series Power MOSFET
SiHA24N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SiHA24N80AE	VISHAY	获取价格	E Series Power MOSFET
SiHA25N50E	VISHAY	获取价格	E Series Power MOSFET
SiHA25N60EFL	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode and Low Gate Charge
SiHA2N80E	VISHAY	获取价格	E Series Power MOSFET
SiHA4N80E	VISHAY	获取价格	E Series Power MOSFET
SiHA5N80AE	VISHAY	获取价格	E Series Power MOSFET
SiHA690N60E	VISHAY	获取价格	E Series Power MOSFET