SiHA22N60EF
Vishay Siliconix
www.vishay.com
EF Series Power MOSFET With Fast Body Diode
FEATURES
D
Thin-Lead TO-220 FULLPAK
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss
)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
G
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
S
D
G
N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) typ. () at 25 °C
VGS = 10 V
0.158
Qg max. (nC)
96
9
Q
gs (nC)
gd (nC)
Q
21
- Welding
- Induction heating
Configuration
Single
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Thin-Lead TO-220 FULLPAK
SiHA22N60EF-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
600
V
VGS
30
T
C = 25 °C
19
12
Continuous drain current (TJ = 150 °C) e
VGS at 10 V
ID
TC = 100 °C
A
Pulsed drain current a
IDM
46
Linear derating factor
0.26
144
W/°C
mJ
W
Single pulse avalanche energy b
Maximum power dissipation
Operating junction and storage temperature range
Drain-source voltage slope
Reverse diode dv/dt d
Soldering recommendations (peak temperature) c
EAS
PD
33
TJ, Tstg
-55 to +150
70
°C
TJ = 125 °C
For 10 s
dv/dt
V/ns
50
260
°C
Mounting torque, M3 screw
0.6
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 3.2 A
c. 1.6 mm from case
d. ISD ID, di/dt = 400 A/μs, starting TJ = 25 °C
e. Limited by maximum junction temperature
S19-0120-Rev. A, 04-Feb-2019
Document Number: 92250
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000