Datasheet > SIGC54T60R3_05

SIGC54T60R3_05

更新时间： 2024-11-21 09:25:35

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
4页	89K
描述
IGBT3 Chip

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中文翻译

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数据手册

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SIGC54T60R3_05 数据手册

SIGC54T60R3

IGBT³Chip

FEATURES:

This chip is used for:

power module

600V Trench & Field Stop technology

low V_CE(sat)

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

Applications:

drives

Chip Type

SIGC54T60R3

V_CE

I_Cn

Die Size

Package

Ordering Code

Q67050-

A4341-A101

600V 100A

5.97 x 8.97 mm²

sawn on foil

MECHANICAL PARAMETER:

Raster size

5.97 x 8.97

( 2.489 x 1.767 ) x 4

( 2.789 x 1.995 ) x 4

mm²

Emitter pad size

Gate pad size

1.615 x 0.817

53.6 / 40

Area total / active

Thickness

mm²

µm

Wafer size

150

deg

Flat position

Max. possible chips per wafer

Passivation frontside

Emitter metallization

245 pcs

Photoimide

3200 nm AlSiCu

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 2, 27.01.2005

12 3 4

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