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SIGC68T170R3EX1SA3 PDF预览

SIGC68T170R3EX1SA3

更新时间: 2024-10-26 19:57:39
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
5页 110K
描述
Insulated Gate Bipolar Transistor

SIGC68T170R3EX1SA3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.62
Base Number Matches:1

SIGC68T170R3EX1SA3 数据手册

 浏览型号SIGC68T170R3EX1SA3的Datasheet PDF文件第2页浏览型号SIGC68T170R3EX1SA3的Datasheet PDF文件第3页浏览型号SIGC68T170R3EX1SA3的Datasheet PDF文件第4页浏览型号SIGC68T170R3EX1SA3的Datasheet PDF文件第5页 
SIGC68T170R3E  
IGBT3 Power Chip  
Features:  
This chip is used for:  
power modules  
1700V Trench & Field Stop technology  
low turn-off losses  
C
E
short tail current  
positive temperature coefficient  
easy paralleling  
Applications:  
drives  
G
Chip Type  
VCE  
IC  
Die Size  
8.23 x 8.25 mm2  
Package  
SIGC68T170R3E 1700V 50A  
sawn on foil  
Mechanical Parameters  
Raster size  
8.23 x 8.25  
Emitter pad size (incl. gate pad)  
Gate pad size  
4 x ( 2.94 x 2.97 )  
mm2  
1.18 x 1.09  
67.9  
Area total  
Thickness  
190  
µm  
Wafer size  
200  
mm  
Max.possible chips per wafer  
Passivation frontside  
Pad metal  
392  
Photoimide  
3200 nm AlSiCu  
Ni Ag –system  
Backside metal  
Die bond  
suitable for epoxy and soft solder die bonding  
Electrically conductive glue or solder  
Wire bond  
Al, <500µm  
Reject ink dot size  
0.65mm ; max 1.2mm  
Store in original container, in dry nitrogen, in dark  
Recommended storage environment  
environment, < 6 month at an ambient temperature of 23°C  
Edited by INFINEON Technologies, IMM PSD, L7761T, Edition 2.1, 14.04.2010  

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