5秒后页面跳转
SIGC81T60NCX1SA3 PDF预览

SIGC81T60NCX1SA3

更新时间: 2024-10-27 08:33:47
品牌 Logo 应用领域
英飞凌 - INFINEON 功率控制晶体管
页数 文件大小 规格书
4页 66K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, 8.99 X 8.99 MM, DIE-10

SIGC81T60NCX1SA3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIE包装说明:UNCASED CHIP, S-XUUC-N10
针数:10Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
最大集电极电流 (IC):100 A集电极-发射极最大电压:600 V
配置:SINGLEJESD-30 代码:S-XUUC-N10
元件数量:1端子数量:10
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):235 ns
标称接通时间 (ton):125 nsBase Number Matches:1

SIGC81T60NCX1SA3 数据手册

 浏览型号SIGC81T60NCX1SA3的Datasheet PDF文件第2页浏览型号SIGC81T60NCX1SA3的Datasheet PDF文件第3页浏览型号SIGC81T60NCX1SA3的Datasheet PDF文件第4页 
SIGC81T60NC  
IGBT Chip in NPT-technology  
C
FEATURES:  
This chip is used for:  
IGBT-Modules  
·
·
·
·
·
600V NPT technology  
100µm chip  
short circuit prove  
positive temperature coefficient  
easy paralleling  
·
Applications:  
drives  
G
E
·
Chip Type  
VCE  
ICn  
Die Size  
Package  
Ordering Code  
Q67041-A4694-  
A001  
SIGC81T60NC  
600V 100A  
8.99 x 8.99 mm2  
sawn on foil  
MECHANICAL PARAMETER:  
mm2  
Raster size  
8.99 x 8.99  
80.82 / 72.6  
8x( 1.77x2.82 )  
0.78 x 1.51  
100  
Area total / active  
Emitter pad size  
Gate pad size  
Thickness  
µm  
mm  
deg  
Wafer size  
150  
Flat position  
90  
Max.possible chips per wafer  
Passivation frontside  
Emitter metallization  
169  
Photoimide  
3200 nm Al Si 1%  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Collector metallization  
Die bond  
electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject Ink Dot Size  
Æ 0.65mm ; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies AI PS DD HV3, L 7462-M, Edition 2, 28.11.2003  

与SIGC81T60NCX1SA3相关器件

型号 品牌 获取价格 描述 数据表
SIGC81T60NCX1SA4 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, 8.99 X 8.99 MM, DI
SIGC81T60SNC INFINEON

获取价格

IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
SIGC84T120R3 INFINEON

获取价格

IGBT3 Chip
SIGC84T120R3E INFINEON

获取价格

TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术,为行业树
SIGC84T120R3L INFINEON

获取价格

IGBT3 Chip
SIGC84T120R3LE INFINEON

获取价格

Insulated Gate Bipolar Transistor
SIGC84T120R3LEX1SA7 INFINEON

获取价格

Insulated Gate Bipolar Transistor,
SIGE AMSCO

获取价格

Low-Noise-Amplifier
SIGF10 ASM-SENSOR

获取价格

Messumformer mit Frequenz-Eingang
SIGF10-2L ASM-SENSOR

获取价格

Messumformer mit Frequenz-Eingang