是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DIE | 包装说明: | UNCASED CHIP, R-XUUC-N10 |
针数: | 10 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.61 |
Is Samacsys: | N | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUUC-N10 | 元件数量: | 1 |
端子数量: | 10 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SIGC76T60R3E | INFINEON |
获取价格 |
TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
SIGC76T65R3E | INFINEON |
获取价格 |
TRENCHSTOP™ IGBT 结合独特 TRENCHSTOP™ 和场终止技术,为行业树 | |
SIGC78T65R3E | INFINEON |
获取价格 |
TRENCHSTOP? IGBT 结合独特 TRENCHSTOP? 和场终止技术,为行业树 | |
SIGC81T120R2C | INFINEON |
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IGBT Chip in NPT-technology | |
SIGC81T120R2CL | INFINEON |
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IGBT Chip in NPT-technology | |
SIGC81T120R2CS | INFINEON |
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IGBT Chip in NPT-technology | |
SIGC81T60NC | INFINEON |
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IGBT Chip in NPT-technology | |
SIGC81T60NCX1SA3 | INFINEON |
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Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, 8.99 X 8.99 MM, DI | |
SIGC81T60NCX1SA4 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, 8.99 X 8.99 MM, DI | |
SIGC81T60SNC | INFINEON |
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IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient |