Datasheet > SIGC57T120R3LE

SIGC57T120R3LE

更新时间： 2024-10-26 21:15:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	125K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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SIGC57T120R3LE 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.57	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SIGC57T120R3LE 数据手册

SIGC57T120R3LE

IGBT3 Chip

Features:

This chip is used for:

power modules

•

1200V Trench & Field Stop technology

•

low turn-off losses

short tail current

Applications:

positive temperature coefficient

easy paralleling

•

drives

Chip Type

V_CE

I_C

Die Size

7.6 x 7.53 mm²

Package

SIGC57T120R3LE 1200V 50A

sawn on foil

Mechanical Parameters

Raster size

7.6 x 7.53

Emitter pad size (incl. gate pad)

Gate pad size

4x(2.98 x 2.97)

mm²

1.139 x 1.139

Area total

57.2

120

200

458

Thickness

µm

Wafer size

Max.possible chips per wafer

Passivation frontside

Pad metal

Photoimide

3200 nm AlSiCu

Ni Ag –system

Backside metal

Die bond

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

0.65mm ; max 1.2mm

Store in original container, in dry nitrogen, in dark

Recommended storage environment

environment, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, IMM PSD, L7661U, Edition 2.2, 30.04.2010

12 3 4 5

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