Datasheet > SIGC84T120R3

SIGC84T120R3

更新时间： 2024-11-21 03:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
4页	83K
描述
IGBT3 Chip

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中文翻译

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数据手册

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SIGC84T120R3 数据手册

SIGC84T120R3

IGBT³Chip

FEATURES:

1200V Trench + Field Stop technology

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

This chip is used for:

· power module

Applications:

drives

Chip Type

V_CE

I_Cn

Die Size

Package

Ordering Code

Q67050-

A4107-A001

SIGC84T120R3

1200V 75A

9.13 x 9.15 mm²

sawn on foil

MECHANICAL PARAMETER:

Raster size

9.13 x 9.15

Emitter pad size

Gate pad size

8x(1.864 x 3.736)

1.139 x 1.139

83.5 / 63.6

140

Area total / active

Thickness

mm²

µm

Wafer size

150

grd

Flat position

Max.possible chips per wafer

Passivation frontside

Emitter metallization

164 pcs

Photoimide

3200 nm AlSiCu

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L7671A, Edition 2, 04.09.2003

12 3 4

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