GS82582QT19/37RE-350M/250M
GS81302QT19/37RE-350M/250M
GS8662QT19/37RE-350M/250M
350 MHz–250 MHz
1.8 V VDD
1.8 V and 1.5 V I/O
Rad-Tolerant SRAM
288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II+TM
165-Bump BGA
Military Temp
Features
SigmaQuad™ Family Overview
• Aerospace-Level Product
The GS82582QT19/37, GS81302QT19/37, and
• 2.0 clock Latency
GS8662QT19/37 are built in compliance with the
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• Burst of 2 Read and Write
SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 301,989,888-bit (288Mb),
150,994,944-bit (144Mb), and 75,497,472-bit (72Mb) SRAMs.
These SigmaQuad SRAMs comprise a family of low power,
low voltage HSTL I/O Radiation-Tolerant (Rad-Tolerant)
SRAMs designed to operate in Radiation environments.
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
Clocking and Addressing Schemes
The Rad-Tolerant SigmaQuad-II+ SRAMs are synchronous
devices. They employ two input register clock inputs, K and K.
K and K are independent single-ended clock inputs, not
differential inputs to a single differential clock input buffer.
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump leaded BGA package
Each internal read and write operation in a SigmaQuad-II+ B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed. Therefore, the address field of a
SigmaQuad-II+ B2 RAM is always one address pin less than
the advertised index depth (e.g., the 8M x 36 has an 4M
addressable index).
Radiation Performance
• Total Ionizing Dose (TID) > 50krads(Si)
• Destructive Single Event Latchup Immunity >42.2 MeV.cm2/mg
(100C)
Parameter Synopsis
-350M
2.86 ns
0.45 ns
-250M
4.0 ns
0.45 ns
tKHKH
tKHQV
Rev: 1.01a 9/2020
1/23
© 2018, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.