5秒后页面跳转
SI9424BDY PDF预览

SI9424BDY

更新时间: 2024-11-11 22:33:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 45K
描述
P-Channel 20-V (D-S) MOSFET

SI9424BDY 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.91
配置:Single最大漏极电流 (Abs) (ID):5.6 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SI9424BDY 数据手册

 浏览型号SI9424BDY的Datasheet PDF文件第2页浏览型号SI9424BDY的Datasheet PDF文件第3页浏览型号SI9424BDY的Datasheet PDF文件第4页浏览型号SI9424BDY的Datasheet PDF文件第5页 
Si9424BDY  
Vishay Siliconix  
New Product  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.025 @ V  
= -4.5 V  
-7.1  
GS  
-20  
0.033 @ V = -2.5  
GS  
V
- 6.1  
S
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
D
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-20  
DS  
V
"9  
GS  
T
= 25_C  
= 70_C  
-5.6  
-4.5  
- 7.1  
-5.6  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-30  
DM  
a
continuous Source Current (Diode Conduction)  
I
-1.7  
2.0  
1.3  
-1.0  
1.25  
0.8  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
50  
80  
30  
62.5  
100  
40  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72015  
S-21785—Rev. A, 07-Oct-02  
www.vishay.com  
1

SI9424BDY 替代型号

型号 品牌 替代类型 描述 数据表
SI4403CDY-T1-GE3 VISHAY

功能相似

Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Meta

与SI9424BDY相关器件

型号 品牌 获取价格 描述 数据表
SI9424DY FAIRCHILD

获取价格

Single P-Channel 2.5V Specified PowerTrench MOSFET
SI9424DYD84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
SI9424DY-E3 VISHAY

获取价格

Transistor
SI9424DYF011 FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
SI9424DY-T1-E3 VISHAY

获取价格

Power Field-Effect Transistor, 7.7A I(D), 20V, 0.025ohm, 1-Element, P-Channel, Silicon, Me
SI9426 FAIRCHILD

获取价格

Single N-Channel, 2.5V Specified MOSFET
SI9426DY VISHAY

获取价格

N-Channel 2.5-V (G-S) MOSFET
SI9426DY FAIRCHILD

获取价格

Single N-Channel, 2.5V Specified MOSFET
SI9426DY_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 10.5A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
SI9426DYD84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 10.5A I(D), 20V, 1-Element, N-Channel, Silicon, Meta