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SI9410DYS62Z PDF预览

SI9410DYS62Z

更新时间: 2024-11-12 15:51:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
3页 234K
描述
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI9410DYS62Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):7 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI9410DYS62Z 数据手册

 浏览型号SI9410DYS62Z的Datasheet PDF文件第2页浏览型号SI9410DYS62Z的Datasheet PDF文件第3页 
September 1999  
Si9410DY*  
Single N-Channel Enhancement Mode MOSFET  
General Description  
Features  
This N-Channel Enhancement Mode MOSFET is  
produced using Fairchild Semiconductor's advance  
process that has been especially tailored to minimize  
on-state resistance and yet maintain superior switching  
performance.  
• 7.0 A, 30 V. RDS(ON) = 0.030 @ VGS = 10 V  
RDS(ON) = 0.050 @ VGS = 4.5 V  
• Low gate charge.  
• Fast switching speed.  
This device is well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
• High power and current handling capability.  
Applications  
• Battery switch  
• Load switch  
• Motor controls  
SO-8  
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1999 Fairchild Semiconductor Corporation  
Si9410DY Rev. C  

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