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SI6926DQ PDF预览

SI6926DQ

更新时间: 2024-11-20 21:57:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 82K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

SI6926DQ 数据手册

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April 2001  
SI6926DQ  
Dual N-Channel 2.5V Specified PowerTrench MOSFET  
General Description  
Features  
This N-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild's Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
management applications with a wide range of gate  
drive voltage (2.5V – 12V).  
5.5 A, 20 V. RDS(ON) = 0.021 @ VGS = 4.5 V  
DS(ON) = 0.035 @ VGS = 2.5 V  
R
Extended VGSS range (±12V) for battery applications  
Low gate charge  
Applications  
Load switch  
High performance trench technology for extremely  
low RDS(ON)  
Motor drive  
DC/DC conversion  
Power management  
Low profile TSSOP-8 package  
G
2
S
2
1
2
3
4
8
7
6
5
S
2
D
2
G
1
S
1
S
1
D
1
TSSOP-8  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
20  
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
±12  
5.5  
30  
(Note 1a)  
PD  
Power Dissipation  
(Note 1a)  
(Note 1b)  
1.0  
0.6  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
125  
208  
RθJA  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
6926  
SI6926DQ  
13’’  
12mm  
3000 units  
SI6926DQ Rev A(W)  
2001 Fairchild Semiconductor Corporation  

SI6926DQ 替代型号

型号 品牌 替代类型 描述 数据表
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