Datasheet > SI6953DQ

SI6953DQ

更新时间： 2024-02-02 21:46:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管光电二极管
页数	文件大小	规格书
5页	111K
描述
Dual 20V P-Channel PowerTrench MOSFET

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技术参数
数据手册

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SI6953DQ 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.89	最大漏极电流 (Abs) (ID)：	1.9 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI6953DQ 数据手册

September 2001

Si6953DQ

Dual 20V P-Channel PowerTrench MOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild's Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

• –1.9 A, –20 V, R_DS(ON)= 170 mΩ @ V_GS= –10 V.

R_DS(ON)= 320 mΩ @ V_GS= –4.5V.

• Extended V_GSSrange (±20V) for battery applications

• Low gate charge

Applications

• Load switch

• High performance trench technology for extremely

low R_DS(ON)

• Battery protection

• DC/DC conversion

• Power management

• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

–1.9

–15

(Note 1)

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristic

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

100

125

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

6953

Si6953DQ

13’’

12mm

2500 units

Si6953DQ Rev. B (W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

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