是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.89 | 最大漏极电流 (Abs) (ID): | 1.9 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SI6953DQD84Z | FAIRCHILD | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Met |
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SI6954ADQ | VISHAY | N-Channel 2.5-V (G-S) Battery Switch |
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SI6954ADQ_08 | VISHAY | N-Channel 2.5-V (G-S) Battery Switch |
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|
SI6954ADQ-E3 | VISHAY | TRANSISTOR 3100 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET Gen |
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SI6954ADQ-T1-GE3 | VISHAY | N-Channel 2.5-V (G-S) Battery Switch |
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|
SI6954DQ | VISHAY | Dual N-Channel 30-V (D-S) MOSFET |
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