SI6933DQ

更新时间： 2024-11-25 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	212K
描述
Dual P-Channel Enhancement-Mode MOSFET

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SI6933DQ 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.91	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	3.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI6933DQ 数据手册

SPICE Device Model Si6933DQ

Vishay Siliconix

Dual P-Channel Enhancement-Mode MOSFET

CHARACTERISTICS

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the p-channel vertical DMOS. The subcircuit

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

mode

is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-to-10V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 71734

12-Oct-01

www.vishay.com

12 3

中文翻译

下载PDF

SI6933DQ 替代型号

型号	品牌	替代类型	描述	数据表
SI6933DQ	FAIRCHILD	功能相似	Dual 30V P-Channel PowerTrench MOSFET

与SI6933DQ相关器件

型号	品牌	获取价格	描述	数据表
SI6933DQ-T1	VISHAY	获取价格	Transistor
SI6943	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench MOSFET
SI6943BDQ	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI6943BDQ_06	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI6943BDQ-E3	VISHAY	获取价格	TRANSISTOR 2300 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET Gen
SI6943BDQ-T1	VISHAY	获取价格	TRANSISTOR 2300 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET Gen
SI6943BDQ-T1-E3	VISHAY	获取价格	MOSFET 2P-CH 12V 2.3A 8TSSOP
SI6943BDQ-T1-GE3	VISHAY	获取价格	MOSFET 2P-CH 12V 2.3A 8TSSOP
SI6943DQ	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench MOSFET
SI6943DQ	VISHAY	获取价格	Small Signal Field-Effect Transistor, 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semi