5秒后页面跳转
SI6955ADQ-T1 PDF预览

SI6955ADQ-T1

更新时间: 2024-02-28 07:59:34
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
5页 80K
描述
TRANSISTOR 2500 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal

SI6955ADQ-T1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.77配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):2.5 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
Base Number Matches:1

SI6955ADQ-T1 数据手册

 浏览型号SI6955ADQ-T1的Datasheet PDF文件第2页浏览型号SI6955ADQ-T1的Datasheet PDF文件第3页浏览型号SI6955ADQ-T1的Datasheet PDF文件第4页浏览型号SI6955ADQ-T1的Datasheet PDF文件第5页 
                                                                                                                           
_C/W  
Si6955ADQ  
Vishay Siliconix  
New Product  
Dual P-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.080 @ V = –10 V  
"2.9  
"2.2  
GS  
–30  
0.135 @ V = –4.5 V  
GS  
S
1
S
2
TSSOP-8  
D
1
D
G
1
G
2
1
2
3
4
8
7
6
5
2
2
2
D
S
1
S
1
1
S
S
Si6955ADQ  
G
G
2
Top View  
D
1
D
2
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
–30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
"2.9  
"2.3  
"2.5  
"2.0  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current (10 ms Pulse Width)  
I
"20  
DM  
a
Continuous Source Current (Diode Conduction)  
I
–1.0  
1.14  
0.73  
–0.70  
0.83  
0.53  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
88  
124  
69  
110  
150  
83  
a
Maximum Junction-to-Ambient  
R
thJA  
thJF  
Maximum Junction-to-Foot  
R
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71103  
S-99450—Rev. A, 06-Dec-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  

与SI6955ADQ-T1相关器件

型号 品牌 描述 获取价格 数据表
SI6955ADQ-T1-E3 VISHAY Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal

获取价格

SI6955ADQ-T1-GE3 VISHAY Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,

获取价格

SI6955DQ FAIRCHILD Dual 30V P-Channel PowerTrench MOSFET

获取价格

SI6955DQ VISHAY Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

获取价格

SI6955DQ-E3 VISHAY Transistor

获取价格

SI6955DQ-T1-E3 VISHAY Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal

获取价格