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SI6943DQ-E3 PDF预览

SI6943DQ-E3

更新时间: 2024-11-21 20:44:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 165K
描述
Transistor

SI6943DQ-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.84最大漏极电流 (Abs) (ID):2.5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

SI6943DQ-E3 数据手册

 浏览型号SI6943DQ-E3的Datasheet PDF文件第2页浏览型号SI6943DQ-E3的Datasheet PDF文件第3页浏览型号SI6943DQ-E3的Datasheet PDF文件第4页 
DOC. NO. 05CB-000343 PART NO. 0505-001037  
TEMIC  
Si6943DQ  
Siliconix  
Dual P-Channel Enhancement-Mode MOSFET  
Product Summary  
TSSOP-8  
Top View  
P-Channel MOSFET  
Absolute Maximum Ratings (T  
=
25oC Unless Otherwise Noted)  
A
Thermal Resistance Ratings  
Notes  
a. Surface Mounted on FR4 Board,  
t
10 sec.  
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack  
document #1809.  

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