Datasheet > SI6955DQ

SI6955DQ

更新时间： 2024-02-14 16:08:42

品牌	Logo	应用领域
威世 - VISHAY		开关光电二极管晶体管
页数	文件大小	规格书
5页	86K
描述
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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SI6955DQ 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.33	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	2.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI6955DQ 数据手册

Si6955DQ

Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

(V)

(W)

I (A)

DS(ON)

0.085 @ V = –10 V

"2.5

"1.8

–30

0.19 @ V = –4.5 V

TSSOP-8

Si6955DQ

Top View

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

–30

"20

= 25_C

= 70_C

"2.5

"2.1

"20

–1.25

1.0

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

= 25_C

= 70_C

Maximum Power Dissipation

0.64

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Maximum Junction-to-Ambient

thJA

125

_C/W

Notes

A. Surface Mounted on FR4 Board, t v 10 sec.

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70180.

For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm

Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054

Phone (408)988-8000

FaxBack (408)970-5600

www.siliconix.com

S-56944—Rev. D, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors

2-1

12 3 4 5

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