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SI4110DY-T1-GE3 PDF预览

SI4110DY-T1-GE3

更新时间: 2024-11-11 09:26:07
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
10页 242K
描述
N-Channel 80-V (D-S) MOSFET

SI4110DY-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:80 V最大漏极电流 (Abs) (ID):17.3 A
最大漏极电流 (ID):1.39 A最大漏源导通电阻:0.013 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):7.8 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4110DY-T1-GE3 数据手册

 浏览型号SI4110DY-T1-GE3的Datasheet PDF文件第2页浏览型号SI4110DY-T1-GE3的Datasheet PDF文件第3页浏览型号SI4110DY-T1-GE3的Datasheet PDF文件第4页浏览型号SI4110DY-T1-GE3的Datasheet PDF文件第5页浏览型号SI4110DY-T1-GE3的Datasheet PDF文件第6页浏览型号SI4110DY-T1-GE3的Datasheet PDF文件第7页 
New Product  
Si4110DY  
Vishay Siliconix  
N-Channel 80-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
TrenchFET® Power MOSFET  
100 % Rg Tested  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
RoHS  
0.013 at VGS = 10 V  
80  
17.3  
35 nC  
COMPLIANT  
100 % UIS Tested  
APPLICATIONS  
Primary Side Switch  
Half Bridge  
Intermediate Bus Converter  
SO-8  
D
S
S
S
G
1
2
3
4
8
D
D
7
6
5
D
D
G
Top View  
S
N-Channel MOSFET  
Ordering Information: Si4110DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
80  
20  
V
VGS  
T
C = 25 °C  
17.3  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
13.9  
Continuous Drain Current (TJ = 150 °C)  
ID  
11.7b, c  
9.4b, c  
60  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
6.5  
3b, c  
35  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
L = 0.1 mH  
C = 25 °C  
IAS  
EAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
mJ  
W
61.3  
7.8  
5
3.6b, c  
2.3b, c  
T
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
PD  
Maximum Power Dissipation  
T
TJ, Tstg  
- 55 to 150  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJF  
Typical  
29  
Maximum  
Unit  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
t 10 s  
Steady State  
35  
16  
°C/W  
13  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 80 °C/W.  
Document Number: 68766  
S-81713-Rev. A, 04-Aug-08  
www.vishay.com  
1

SI4110DY-T1-GE3 替代型号

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