是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 1.56 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 15.2 A | 最大漏源导通电阻: | 0.006 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5.7 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4114G-B-GM | SILICON |
获取价格 |
RF and Baseband Circuit, 5 X 5 MM, LEAD FREE, QFN-28 | |
SI4114G-BM | SILICON |
获取价格 |
RF and Baseband Circuit, 5 X 5 MM, QFN-28 | |
SI4116DY | VISHAY |
获取价格 |
N-Channel 25-V (D-S) MOSFET | |
SI4116DY-T1-E3 | VISHAY |
获取价格 |
N-Channel 25-V (D-S) MOSFET | |
SI4116DY-T1-GE3 | VISHAY |
获取价格 |
N-Channel 25-V (D-S) MOSFET | |
SI4122 | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-BM | ETC |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-BT | ETC |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-D-GM | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-D-GMR | SILICON |
获取价格 |
RF and Baseband Circuit, ROHS COMPLIANT, MS-220VHHD-1, QFN-28 |