是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | QFN |
包装说明: | HVQCCN, | 针数: | 28 |
Reach Compliance Code: | unknown | HTS代码: | 8542.39.00.01 |
风险等级: | 5.82 | JESD-30 代码: | S-XQCC-N28 |
长度: | 5 mm | 功能数量: | 1 |
端子数量: | 28 | 最高工作温度: | 70 °C |
最低工作温度: | -20 °C | 封装主体材料: | UNSPECIFIED |
封装代码: | HVQCCN | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 0.9 mm |
标称供电电压: | 2.8 V | 表面贴装: | YES |
电信集成电路类型: | RF AND BASEBAND CIRCUIT | 温度等级: | COMMERCIAL |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4114G-BM | SILICON |
获取价格 |
RF and Baseband Circuit, 5 X 5 MM, QFN-28 | |
SI4116DY | VISHAY |
获取价格 |
N-Channel 25-V (D-S) MOSFET | |
SI4116DY-T1-E3 | VISHAY |
获取价格 |
N-Channel 25-V (D-S) MOSFET | |
SI4116DY-T1-GE3 | VISHAY |
获取价格 |
N-Channel 25-V (D-S) MOSFET | |
SI4122 | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-BM | ETC |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-BT | ETC |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-D-GM | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4122-D-GMR | SILICON |
获取价格 |
RF and Baseband Circuit, ROHS COMPLIANT, MS-220VHHD-1, QFN-28 | |
SI4122-D-GT | SILICON |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |