是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | QFN | 包装说明: | HVQCCN, |
针数: | 28 | Reach Compliance Code: | unknown |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.88 |
JESD-30 代码: | S-XQCC-N28 | 长度: | 5 mm |
功能数量: | 1 | 端子数量: | 28 |
最高工作温度: | 70 °C | 最低工作温度: | -20 °C |
封装主体材料: | UNSPECIFIED | 封装代码: | HVQCCN |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 0.9 mm | 标称供电电压: | 2.8 V |
表面贴装: | YES | 电信集成电路类型: | RF AND BASEBAND CIRCUIT |
温度等级: | COMMERCIAL | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4114DY_09 | VISHAY |
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N-Channel 20-V (D-S) MOSFET |
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SI4114DY-T1-E3 | VISHAY |
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N-Channel 20-V (D-S) MOSFET |
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SI4114DY-T1-GE3 | VISHAY |
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N-Channel 20-V (D-S) MOSFET |
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SI4114G-B-GM | SILICON |
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RF and Baseband Circuit, 5 X 5 MM, LEAD FREE, QFN-28 |
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SI4114G-BM | SILICON |
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RF and Baseband Circuit, 5 X 5 MM, QFN-28 |
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SI4116DY | VISHAY |
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N-Channel 25-V (D-S) MOSFET |
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SI4116DY-T1-E3 | VISHAY |
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N-Channel 25-V (D-S) MOSFET |
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SI4116DY-T1-GE3 | VISHAY |
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N-Channel 25-V (D-S) MOSFET |
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SI4122 | SILICON |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
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SI4122-BM | ETC |
获取价格 |
DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS |
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