是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | QFN |
包装说明: | HVQCCN, | 针数: | 28 |
Reach Compliance Code: | compliant | HTS代码: | 8542.39.00.01 |
风险等级: | 2.23 | Is Samacsys: | N |
模拟集成电路 - 其他类型: | PHASE LOCKED LOOP | JESD-30 代码: | S-XQCC-N28 |
长度: | 5 mm | 功能数量: | 1 |
端子数量: | 28 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | UNSPECIFIED |
封装代码: | HVQCCN | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 0.9 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
温度等级: | INDUSTRIAL | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4113-D-GMR | SILICON |
获取价格 |
RF and Baseband Circuit, ROHS COMPLIANT, MS-220VHHD-1, QFN-28 | |
SI4113-D-GT | SILICON |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4113-D-GTR | SILICON |
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RF and Baseband Circuit, CMOS, PDSO24, ROHS COMPLIANT, TSSOP-24 | |
SI4113-D-ZT1 | SILICON |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS | |
SI4113-D-ZT1R | SILICON |
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RF and Baseband Circuit, PDSO24, TSSOP-24 | |
SI4113G | SILICON |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS | |
SI4113G-BM | SILICON |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS | |
SI4113G-BT | SILICON |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS | |
SI4113G-BT* | ETC |
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DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS | |
SI4114DY | VISHAY |
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N-Channel 20-V (D-S) MOSFET |