SI4114DY-T1-E3

更新时间： 2024-02-14 16:09:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	242K
描述
N-Channel 20-V (D-S) MOSFET

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SI4114DY-T1-E3 数据手册

New Product

Si4114DY

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

Definition

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

20^e

0.006 at V_GS= 10 V

0.007 at V_GS= 4.5 V

•

27.5 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Low-Side MOSFET for Synchronous Buck

- Game Machine

SO-8

- PC

Top View

Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free)

Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

20^e

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

18.2

Continuous Drain Current (T_J= 150 °C)

I_D

15.2^{b, c}

12.1^{b, c}

5.1

2.2^{b, c}

5.7

3.6

2.5^{b, c}

1.6^{b, c}

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

e. Package limited.

Document Number: 68394

S09-0764-Rev. B, 04-May-09

www.vishay.com

12 3 4 5 6 7...10

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