Datasheet > SGB20N60

SGB20N60

更新时间： 2024-09-17 22:21:59

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
12页	269K
描述
Fast S-IGBT in NPT-technology

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SGB20N60 数据手册

SGP20N60

SGB20N60, SGW20N60

Fast S-IGBT in NPT-technology

• 75% lower E_offcompared to previous generation combined with

low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

Type

V_CE

I_C

V_CE(sat)

T_j

Package

Ordering Code

SGP20N60

SGB20N60

SGW20N60

600V

20A

2.4V

TO-220AB

TO-263AB

TO-247AC

Q67041-A4712-A2

Q67041-A4712-A4

Q67040-S4236

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_{Cpul s}

Turn off safe operating area

V_CE≤ 600V, T_j≤ 150°C

Gate-emitter voltage

V_{G E}

E_AS

±20

Avalanche energy, single pulse

I_C= 20 A, V_CC= 50 V, R_GE= 25 Ω,

start at T_j= 25°C

115

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

t_SC

µs

P_{t ot}

179

T_C= 25°C

Operating junction and storage temperature

T_j, T_stg

-55...+150

°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Mar-00

12 3 4 5 6 7...12

中文翻译

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与SGB20N60相关器件

型号	品牌	获取价格	描述	数据表
SGB20N60_06	INFINEON	获取价格	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
SGB20N60ATMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PL
SGB20UF	SSDI	获取价格	60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB20UFS	SSDI	获取价格	Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
SGB20UFSMS	SSDI	获取价格	60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB20UFSMSS	SSDI	获取价格	60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB20UFSMSTX	SSDI	获取价格	60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB20UFSMSTXV	SSDI	获取价格	60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB20UFTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
SGB20UFTXV	SSDI	获取价格	Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2