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SGB30N60ATMA1 PDF预览

SGB30N60ATMA1

更新时间: 2024-09-18 15:51:07
品牌 Logo 应用领域
英飞凌 - INFINEON 瞄准线功率控制晶体管
页数 文件大小 规格书
11页 378K
描述
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

SGB30N60ATMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:GREEN, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.67其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR最大集电极电流 (IC):41 A
集电极-发射极最大电压:600 V配置:SINGLE
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):391 ns标称接通时间 (ton):78 ns
Base Number Matches:1

SGB30N60ATMA1 数据手册

 浏览型号SGB30N60ATMA1的Datasheet PDF文件第2页浏览型号SGB30N60ATMA1的Datasheet PDF文件第3页浏览型号SGB30N60ATMA1的Datasheet PDF文件第4页浏览型号SGB30N60ATMA1的Datasheet PDF文件第5页浏览型号SGB30N60ATMA1的Datasheet PDF文件第6页浏览型号SGB30N60ATMA1的Datasheet PDF文件第7页 
SGB30N60  
Fast IGBT in NPT-technology  
C
75% lower Eoff compared to previous generation  
combined with low conduction losses  
Short circuit withstand time – 10 µs  
Designed for:  
G
E
- Motor controls  
- Inverter  
NPT-Technology for 600V applications offers:  
- very tight parameter distribution  
- high ruggedness, temperature stable behaviour  
- parallel switching capability  
PG-TO-263-3-2 (D²-PAK)  
(TO-263AB)  
Qualified according to JEDEC1 for target applications  
Pb-free lead plating; RoHS compliant  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
VCE(sat)  
Tj  
Marking  
Package  
SGB30N60  
600V  
30A  
2.5V  
G30N60 PG-TO-263-3-2  
150°C  
Maximum Ratings  
Parameter  
Symbol  
VCE  
Value  
Unit  
V
600  
Collector-emitter voltage  
DC collector current  
TC = 25°C  
IC  
A
41  
30  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
Turn off safe operating area  
ICpuls  
-
112  
112  
VCE 600V, Tj 150°C  
Gate-emitter voltage  
VGE  
EAS  
V
mJ  
±20  
165  
Avalanche energy, single pulse  
IC = 30 A, VCC = 50 V, RGE = 25 ,  
start at Tj = 25°C  
Short circuit withstand time2  
tSC  
10  
µs  
W
VGE = 15V, VCC 600V, Tj 150°C  
Power dissipation  
Ptot  
250  
TC = 25°C  
Operating junction and storage temperature  
Soldering temperature (reflow soldering, MSL1)  
Tj , Tstg  
-55...+150  
260  
°C  
1 J-STD-020 and JESD-022  
2 Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2.3 05.03.2009  

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