SGB20UFSMSTX

更新时间： 2024-09-18 03:32:23

品牌	Logo	应用领域
SSDI		高压
页数	文件大小	规格书
2页	77K
描述
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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中文翻译

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数据手册

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SGB20UFSMSTX 数据手册

SGB10UFSMS

thru

SGB35UFSMS

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

60 mAMP

1000-3500 VOLTS

60 nsec

HIGH VOLTAGE

RECTIFIER

Part Number / Ordering Information ^1/

SGB _ _ UF SMS __

L Screening^2/= None

TX = TX Level

⏐

TXV = TXV Level

S = S Level

Package

SMS = Surface Mount Square Tab

FEATURES:

•

Ultra Fast Recovery: 60 nsec Maximum

PIV to 3500 Volts

Hermetically Sealed

Void-Free Construction

Recovery Time

UF = Ultra Fast

Voltage

10 = 1000 V

Metallurgically Bonded

15 = 1500 V

20 = 2000 V

25 = 2500 V

30 = 3000 V

35 = 3500 V

175°C Maximum Operating Temperature

Micro Miniature Package

TX, TXV, and Space Level Screening Available^2/

ELECTRICAL CHARACTERISTICS

Maximum

Surge

Current

(1 Cycle)

Maximum

Reverse

Recovery

Time

Peak

Inverse

Voltage

Average

Rectified

Current

Maximum

Forward

Voltage

Maximum

Junction

Typical

Thermal

Maximum

Reverse Current

Part

Number

Capacitance Impedance

Symbol

Units

PIV

IR@PIV

FSM

Volts

25°C

Amps

25°C

nsec

μA

Volts

°C/W

= 100V

= 1MHZ

Conditions

25°C 100°C

25°C

100°C

25°C

SGB10UFSMS

SGB15UFSMS

1000

1500

0.1

9.5

1.0

165

1.0

SGB20UFSMS

SGB25UFSMS

SGB30UFSMS

SGB35UFSMS

2000

2500

3000

3500

0.1

9.5

1.0

165

1/ For Ordering Information, Price, and Availability – Contact Factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a suitable dielectric material.

4/ I_F= I_O; Max. forward voltage measured with instantaneous forward pulse of 300µsec minimum.

5/ Max. lead temperature for soldering is 250°C, 3/8” from case for 5 sec maximum.

6/ Operating and storage temperature: -65°C to +175°C.

Surface Mount Square

Tab

7/ Reverse Recovery Test Conditions: IF=50mA, IR=100mA, IRR=25mA, TA=25°C.

8/ Consult manufacturing for operating curves.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RV0005E

DOC

中文翻译

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与SGB20UFSMSTX相关器件

型号	品牌	获取价格	描述	数据表
SGB20UFSMSTXV	SSDI	获取价格	60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB20UFTX	SSDI	获取价格	Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
SGB20UFTXV	SSDI	获取价格	Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
SGB-2233	SIRENZA	获取价格	DC - 4.5 GHz Active Bias Gain Block
SGB-2233Z	SIRENZA	获取价格	DC - 4.5 GHz Active Bias Gain Block
SGB-2433	SIRENZA	获取价格	DC - 4 GHz Active Bias Gain Block
SGB-2433	STANFORD	获取价格	DC - 4 GHz Active Bias Gain Block
SGB-2433Z	SIRENZA	获取价格	DC - 4 GHz Active Bias Gain Block
SGB25UF	SSDI	获取价格	60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB25UFS	SSDI	获取价格	Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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