Datasheet > SGB-2233

SGB-2233

更新时间： 2024-09-18 03:32:23

品牌	Logo	应用领域
SIRENZA		射频微波
页数	文件大小	规格书
6页	125K
描述
DC - 4.5 GHz Active Bias Gain Block

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SGB-2233 数据手册

Preliminary Data Sheet

SGB-2233

Product Description

Sirenza Microdevices’ SGB-2233 is a high performance SiGe HBT

MMIC amplifier utilizing a Darlington configuration with an active bias

network. The active bias network provides stable current over tempera-

ture and process Beta variations. Designed to run directly from a 3V to

5V supply the SGB-2233 does not require a drop resistor as compared

to typical Darlington amplifiers. This robust amplifier features a Class

1C ESD rating, low thermal resistance , and unconditional stability. The

SGB-2233 product is designed for high linearity 3V gain block applica-

tions that require small size and minimal external components. It is on

chip matched to 50 ohm and an external bias inductor choke is required

for the application band.

RoHS Compliant

& Green Package

SGB-2233Z

DC – 4.5 GHz Active Bias Gain Block

This product is available in a RoHS Compliant and Green package with

matte tin finish, designated by the “Z” package suffix.

Product Features

• Available in Lead Free, RoHS compliant, & Green

Packaging

Functional Block Diagram

• High reliability SiGe HBT Technology

• Robust Class 1C ESD

• Simple and small size

• P1dB = 6.7 dBm @ 1950MHz

• IP3 = 19.0 dBm @ 1950MHz

• Low Thermal Resistance = 221 C/W

Active

Bias

RFOUT

RFIN

Applications

• 3V Battery operated applications

• LO buffer amp

• RF pre-driver and RF receive path

Key Specifications

Parameters: Test Conditions

Symbol

Unit

Min.

Typ.

Max.

= 50Ω, V = 3.0V, Ic = 25mA, T = 30ºC)

Frequency of Operation

MHz

4500

Small Signal Gain – 850MHz

Small Signal Gain – 1950MHz

Small Signal Gain – 2400MHz

Output Power at 1dB Compression – 850MHz

Output Power at 1dB Compression – 1950MHz

Output Power at 1dB Compression – 2400MHz

Output IP3 – 850MHz

13.9

12.9

12.5

7.9

dBm

11.4

5.2

14.4

6.7

1dB

6.4

20.5

19.0

19.5

16.7

OIP3

Output IP3 – 1950MHz

16.5

Output IP3 – 2400MHz

IRL

ORL

Input Return Loss @ 1950MHz

Output Return Loss@ 1950MHz

Current

13.5

12.7

Noise Figure @1950MHz

4.2

5.2

Thermal Resistance (junction - lead)

ºC/W

221

th, j-l

PreliminaryThe information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the

circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.

303 South Technology Court, Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-103079 Rev G

12 3 4 5 6

中文翻译

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与SGB-2233相关器件

型号	品牌	获取价格	描述	数据表
SGB-2233Z	SIRENZA	获取价格	DC - 4.5 GHz Active Bias Gain Block
SGB-2433	SIRENZA	获取价格	DC - 4 GHz Active Bias Gain Block
SGB-2433	STANFORD	获取价格	DC - 4 GHz Active Bias Gain Block
SGB-2433Z	SIRENZA	获取价格	DC - 4 GHz Active Bias Gain Block
SGB25UF	SSDI	获取价格	60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB25UFS	SSDI	获取价格	Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2
SGB25UFSMS	SSDI	获取价格	60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB25UFSMSS	SSDI	获取价格	60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB25UFSMSTX	SSDI	获取价格	60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
SGB25UFSMSTXV	SSDI	获取价格	60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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