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SGB35UFTX PDF预览

SGB35UFTX

更新时间: 2024-09-19 05:57:19
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 159K
描述
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

SGB35UFTX 数据手册

 浏览型号SGB35UFTX的Datasheet PDF文件第2页 
SGB10UF  
and  
SGB35UF  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
60 mA  
1000 3500 VOLTS  
60 nsec  
HIGH VOLTAGE  
RECTIFIER  
Designer’s Data Sheet  
___  
UF ___  
SGB  
Screening 7/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
S = S Level  
Recovery Time  
UF = Ultra Fast  
FEATURES:  
Ultra Fast Recovery: 60nsec Maximum  
PIV to 3500 Volts  
Hermetically Sealed  
Void-Free Construction  
Metallurgically Bonded  
175°C Maximum Operating Temperature  
Micro Miniature Package  
TX, TXV, and Space Level Screening  
Voltage/Family  
10 = 1000V  
15 = 1500V  
20 = 2000V  
25 = 2500V  
30 = 3000V  
35 = 3500 V  
7/  
Available  
ELECTRICAL CHARACTERISTICS  
Maximu Maximum Maximum  
Peak  
Inverse  
Voltage  
Average  
Rectifier  
Current  
Maximum  
Reverse  
Current  
Maximum  
Junction  
Capacitance Impedance  
Typical  
Thermal  
m
Surge  
Reverse  
Recovery  
Time  
Part  
Number  
Forward  
Voltage  
Current  
(1 Cycle)  
Symbol  
Units  
PIV  
I
IR @ PIV  
2/  
I
5/  
C
J
θ
0
FSM  
JL  
V
t
RR  
F
Volts  
mA  
Volts  
25°C  
Amps  
25°C  
nsec  
pF  
°C/W  
μA  
VR = 100V  
fT = 1MHZ  
25°C 100°C  
25°C  
100°C  
L = 1/4"  
Conditions  
SGB10UF  
SGB15UF  
SGB20UF  
SGB25UF  
SGB30UF  
SGB35UF  
25°C  
1000  
1500  
2000  
2500  
3000  
3500  
60  
60  
60  
60  
60  
60  
45  
45  
45  
45  
45  
45  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
10  
10  
10  
10  
10  
10  
9.5  
9.5  
9.5  
9.5  
9.5  
9.5  
5
5
5
5
5
5
60  
60  
60  
60  
60  
60  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
185  
185  
185  
185  
185  
185  
Axial  
NOTES:  
1. Operating and testing over 10,000 V/inch may require encapsulation or immersion in suitable dielectric  
material.  
2. I = I ; Maximum forward voltage measured with instantaneous forward pulse of 300msec minimum.  
F
0
o
3. Maximum lead temperature for soldering is 250 C, 3/8" from case for 5 sec maximum.  
o
4. Operating and Storage temperature: -65 to +175 C.  
o
5. Reverse Recovery Test Conditions: I = 50mA, I = 100mA, I  
= 25mA, T = 25 C.  
F
R
RR  
A
6. Consult manufacturing for operating curves.  
7. Screening based on MIL-PRF-19500. Screening flows available on request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RV0003F  
DOC  

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