生命周期: | Active | 包装说明: | E-XALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.69 | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | E-XALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.06 A |
封装主体材料: | UNSPECIFIED | 封装形状: | ELLIPTICAL |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大反向恢复时间: | 0.06 µs | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGB25UFTXV | SSDI |
获取价格 |
Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2 | |
SGB2UFK450A8 | MERITEK |
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PTC Thermistor, Chassis Mount | |
SGB30N60 | INFINEON |
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Fast IGBT in NPT-technology | |
SGB30N60_09 | INFINEON |
获取价格 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation | |
SGB30N60ATMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PL | |
SGB30UF | SSDI |
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60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER | |
SGB30UFSMS | SSDI |
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60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER | |
SGB30UFSMSS | SSDI |
获取价格 |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER | |
SGB30UFSMSTX | SSDI |
获取价格 |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER | |
SGB30UFSMSTXV | SSDI |
获取价格 |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER |