Datasheet > SFF6661S.22

SFF6661S.22

更新时间： 2024-11-13 17:16:43

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	117K
描述
0.86 A, 90 V, 4 Ω N-Channel MOSFET

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数据手册

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SFF6661S.22 数据手册

SFF6661/39

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

0.86 AMP

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

N-CHANNEL MOSFET

90 Volts, 4Ω

SFF6661

/39 ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

Features:



Rugged construction

Low RDS(on) and high transconductance

Fast recovery and superior dv/dt performance

Increased reverse energy capability

Low input and transfer capacitance for easy

paralleling

Package

/39 = TO-39



Hermetically sealed package

Very fast switching speed

TX, TXV, S-Level screening available^2/

Replacement for 2N6661

Maximum Ratings^3/

Symbol

V_DS

Value

Units

Drain - Source Voltage

Gate - Source Voltage

V_GS

±20

Max. Continuous Drain Current

(T_J= 150°C)

T_C= 25°C

T_C= 100°C

0.86

0.54

I_D

I_DM

Max. Instantaneous Drain Current (Tj limited)

T_C= 25°C

T_A= 25°C

6.25

0.725

Total Power Dissipation

°C

P_D

Operating & Storage Temperature

-65 to +150

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Ambient)

(Junction to Case)

R_θJA

R_θJC

170

°C /W

NOTES:

TO-39

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0041B

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