生命周期: | Active | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.68 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 300 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SFF40N30-3 | SSDI |
获取价格 |
40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET | |
SFF40N30B | SSDI |
获取价格 |
40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET | |
SFF40N30M | SSDI |
获取价格 |
40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET | |
SFF40N30M_1 | SSDI |
获取价格 |
Avalanche Rated N-channel MOSFET | |
SFF40N30MDB | SSDI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
SFF40N30MDBS | SSDI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
SFF40N30MDBTX | SSDI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
SFF40N30MDBTXV | SSDI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
SFF40N30MUB | SSDI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
SFF40N30MUBS | SSDI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met |