5秒后页面跳转
SFF40N30Z PDF预览

SFF40N30Z

更新时间: 2024-11-09 03:32:35
品牌 Logo 应用领域
SSDI 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
3页 48K
描述
40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET

SFF40N30Z 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.64雪崩能效等级(Eas):1500 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):40 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SFF40N30Z 数据手册

 浏览型号SFF40N30Z的Datasheet PDF文件第2页浏览型号SFF40N30Z的Datasheet PDF文件第3页 
SFF40N30M  
SFF40N30Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
40 AMP / 300 Volts  
0.10 W  
SFF40N30 __ __ __  
Screening 2/ __ = Not Screen  
TX = TX Level  
N-Channel Power MOSFET  
¦
¦
¦
¦
¦
¦
¦
¦
¦
+
¦
¦
¦
TXV = TXV Level  
S = S Level  
Features:  
¦
+
Lead Option 3/ __ = Straight Leads  
DB = Down Bend  
· Rugged Construction with Polysilicon Gate Cell  
· Low RDS(ON) and High Transconductance  
· Excellent High Temperature Stability  
· Very Fast Switching Speed  
· Fast Recovery and Superior dV/dt Performance  
· Increased Reverse Energy Capability  
· Low Input and Transfer Capacitance for Easy Paralleling  
· Ceramic Seals for Improved Hermeticity  
· Hermetically Sealed Package  
UB = Up Bend  
Package 3/ M = TO-254  
¦
+
Z = TO-254Z  
· TX, TXV, Space Level Screening Available  
· Replacement for IXTH40N30 Types  
Maximum Ratings  
Symbol  
Value  
300  
Units  
Drain – Source Voltage  
Gate – Source Voltage  
VDS  
VGS  
ID  
Volts  
Volts  
Amps  
±20  
40  
Continuous Collector Current  
TC = 25ºC  
TC = 55ºC  
150  
114  
Power Dissipation  
PD  
Top & Tstg  
RqJC  
W
ºC  
-55 to +150  
0.83  
Operating & Storage Temperature  
Maximum Thermal Resistance  
Junction to Case  
ºC/W  
TO-254 (M)  
TO-254Z (Z)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: F00141E  
DOC  

与SFF40N30Z相关器件

型号 品牌 获取价格 描述 数据表
SFF40N30ZDB SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N30ZDBS SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N30ZDBTX SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N30ZDBTXV SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N30ZTXV SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N30ZUB SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N30ZUBS SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N30ZUBTX SSDI

获取价格

Power Field-Effect Transistor, 40A I(D), 300V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
SFF40N60N SSDI

获取价格

Power Field-Effect Transistor
SFF40N60NDBTXV SSDI

获取价格

Power Field-Effect Transistor