Datasheet > SFF40N60NUB

SFF40N60NUB

更新时间： 2024-11-07 10:44:11

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	149K
描述
Power Field-Effect Transistor

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数据手册

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SFF40N60NUB 数据手册

SFF40N60N

SFF40N60P

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

40 AMP / 600 Volts

Typ 40 mΩ

N-Channel POWER MOSFET

│

SFF40N60

│

└ Screening ^2/__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Features:

 Rugged Construction with Polysilicon Gate

 Very Low R_DS(ON)and High Transconductance

 Excellent High Temperature Stability

 Very Fast Switching Speed

 Fast Recovery and Superior dV/dt performance

└ Lead Option

__ = Straight Leads

DB = Down Bend

UB = Up Bend

└ Package N = TO-258

P = TO-259

 Increased Reverse Energy Capability

 Low Input and Transfer Capacitance for Easy Paralleling

 Hermetically Sealed, Isolated Surface Mount Power Package

 Ceramic Seals for Improved Hermeticity

 TX, TXV, S-Level screening available

Maximum Ratings

Symbol

V_DS

Value

600

±20

Units

Volts

Amps

Drain – Source Voltage

Gate – Source Voltage

Continues Drain Current

V_GS

I_D

E_AR

E_AS

Avalanche Energy, repetitive

Avalanche energy, single pulse

1900

150

114

T_C= 25ºC

T_C= 55ºC

Power Dissipation

P_D

Top & Tstg

R_θJC

ºC

Operating & Storage Temperature

-55 to +150

Maximum Thermal Resistance

Junction to Case

0.83

ºC/W

NOTES:

TO-258 (N)

TO-259 (P)

Pulse test: pulse width = 300µsec, duty cycle = 2%

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0059A

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