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SFF40N30M PDF预览

SFF40N30M

更新时间: 2024-11-06 03:32:35
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
3页 48K
描述
40 AMP / 300 Volts 0.10 OHM N-Channel Power MOSFET

SFF40N30M 数据手册

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SFF40N30M  
SFF40N30Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
40 AMP / 300 Volts  
0.10 W  
SFF40N30 __ __ __  
Screening 2/ __ = Not Screen  
TX = TX Level  
N-Channel Power MOSFET  
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TXV = TXV Level  
S = S Level  
Features:  
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Lead Option 3/ __ = Straight Leads  
DB = Down Bend  
· Rugged Construction with Polysilicon Gate Cell  
· Low RDS(ON) and High Transconductance  
· Excellent High Temperature Stability  
· Very Fast Switching Speed  
· Fast Recovery and Superior dV/dt Performance  
· Increased Reverse Energy Capability  
· Low Input and Transfer Capacitance for Easy Paralleling  
· Ceramic Seals for Improved Hermeticity  
· Hermetically Sealed Package  
UB = Up Bend  
Package 3/ M = TO-254  
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+
Z = TO-254Z  
· TX, TXV, Space Level Screening Available  
· Replacement for IXTH40N30 Types  
Maximum Ratings  
Symbol  
Value  
300  
Units  
Drain – Source Voltage  
Gate – Source Voltage  
VDS  
VGS  
ID  
Volts  
Volts  
Amps  
±20  
40  
Continuous Collector Current  
TC = 25ºC  
TC = 55ºC  
150  
114  
Power Dissipation  
PD  
Top & Tstg  
RqJC  
W
ºC  
-55 to +150  
0.83  
Operating & Storage Temperature  
Maximum Thermal Resistance  
Junction to Case  
ºC/W  
TO-254 (M)  
TO-254Z (Z)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: F00141E  
DOC  

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