SD103BWS

更新时间： 2024-02-21 05:46:28

品牌	Logo	应用领域
EIC		二极管
页数	文件大小	规格书
2页	47K
描述
SCHOTTKY BARRIER DIODES

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中文翻译

获取价格

数据手册

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SD103BWS 数据手册

Certificate TH97/10561QM

Certificate TW00/17276EM

SCHOTTKY BARRIER DIODES

SD103AWS - SD103CWS

SOD-323

FEATURES :

* For general purpose applications

1.80

1.60

* The SD103 series is a metal-on-silicon

Schottky barrier device which is

protected by a PN junction guard ring.

* The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications.

* These diodes are also available in the MiniMELF case

with type designations LL103A thru LL103C.

* Pb / RoHS Free

2.80

2.30

MECHANICAL DATA :

* Case : SOD-323 plastic Case

* Weight : approx. 0.004 g

Dimensions in millimeters

* SD103AWS Marking Code : S4

* SD103BWS Marking Code : S5

* SD103CWS Marking Code : S6

Maximum Ratings and Thermal Characteristics (T_C= 25 °C unless otherwise noted)

Parameter

Symbol

Value

Unit

SD103AWS

SD103BWS

SD103CWS

V_RRM

Repetitive Peak Reverse Voltage

I_FSM

P_tot

Maximum Single Cycle Surge 10 µs Square Wave

Power Dissipation (Infinite Heat Sink)

Thermal Resistance Junction to Ambient Air

Junction Temperature

°C/W

°C

150⁽¹⁾

650⁽¹⁾

125⁽¹⁾

R_θ

T_J

T_STG

Storage temperature range

-55 to + 150

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

V_R= 30 V

Min

Typ

Max

Unit

Parameter

Symbol

SD103AWS

SD103BWS

SD103CWS

I_R

Reverse Current

V_R= 20 V

V_R= 10 V

I_F= 20mA

I_F= 200mA

μA

0.37

0.60

V_F

Ctot

Trr

Forward Voltage Drop

Junction Capacitance

Reverse Recovery Time

V_R= 0 V, f = 1MHz

I_F= I_R= 50mA to 200mA

recover to 0.1I_R

Note:

(1) Valid provided that electrodes are kept at ambient temperature.

Page 1 of 2

Rev. 01 : May 4, 2006

中文翻译

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