SBAT54CWT3G

更新时间： 2024-09-30 11:01:31

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管肖特基二极管
页数	文件大小	规格书
4页	52K
描述
30 V 共阴极肖特基二极管

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中文翻译

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数据手册

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SBAT54CWT3G 数据手册

BAT54CWT1

Preferred Device

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

http://onsemi.com

30 VOLT

DUAL COMMON CATHODE

SCHOTTKY BARRIER

DIODES

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc

• Pb−Free Package is Available

ANODE

CATHODE

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Symbol

Value

Unit

MARKING

DIAGRAM

Reverse Voltage

Volts

Forward Power Dissipation

@ T = 25°C

200

1.6

mW/°C

Derate above 25°C

Forward Current (DC)

Junction Temperature

Storage Temperature Range

SOT−323

CASE 419

STYLE 5

5C....D

200 Max

125 Max

°C

stg

−55 to +150

°C

= Specific Device Code

= Date Code

Maximum ratings are those values beyond which device damage can oc-

cur. Maximum ratings applied to the device are individual stress limit val-

ues (not normal operating conditions) and are not valid simultaneously.

If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

ORDERING INFORMATION

†

Device

BAT54CWT1

Package

Shipping

SOT−323

3000/Tape & Reel

BAT54CWT1G SOT−323

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

May, 2004 − Rev. 4

BAT54CWT1/D

12 3 4

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