5秒后页面跳转
SBAW56WT1G PDF预览

SBAW56WT1G

更新时间: 2024-10-01 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管整流二极管
页数 文件大小 规格书
4页 118K
描述
70 V 双共阳极开关二极管

SBAW56WT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-70包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:4 weeks风险等级:2.01
Is Samacsys:N配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W参考标准:AEC-Q101
最大重复峰值反向电压:70 V最大反向恢复时间:0.006 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SBAW56WT1G 数据手册

 浏览型号SBAW56WT1G的Datasheet PDF文件第2页浏览型号SBAW56WT1G的Datasheet PDF文件第3页浏览型号SBAW56WT1G的Datasheet PDF文件第4页 
BAW56WT1  
Preferred Device  
Dual Switching Diode,  
Common Anode  
Features  
PbFree Package is Available  
http://onsemi.com  
CATHODE  
1
ANODE  
3
2
MAXIMUM RATINGS (TA = 25°C)  
CATHODE  
Rating  
Symbol  
Max  
70  
Unit  
V
Reverse Voltage  
Forward Current  
V
R
MARKING  
DIAGRAM  
I
200  
500  
mA  
mA  
F
Peak Forward Surge Current  
I
FM(surge)  
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SC70  
CASE 419  
STYLE 4  
A1 M G  
G
1
1
2
THERMAL CHARACTERISTICS (T = 25°C)  
A
A1 = Device Code  
Characteristic  
Symbol  
Max  
Unit  
M
= Date Code*  
Total Device Dissipation FR5 Board  
P
200  
mW  
D
G
= PbFree Package  
(Note 1)  
T = 25°C  
A
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
Derate above 25°C  
1.6  
625  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, JunctiontoAmbient  
R
JA  
Total Device Dissipation  
Alumina Substrate (Note 2) T = 25°C  
Derate above 25°C  
P
D
ORDERING INFORMATION  
A
2.4  
mW/°C  
°C/W  
°C  
Device  
Package  
Shipping  
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
JA  
417  
BAW56WT1  
SC70  
3000/Tape & Reel  
3000/Tape & Reel  
T , T  
55 to  
+150  
J
stg  
BAW56WT1G  
SC70  
(PbFree)  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
Publication Order Number:  
1
February, 2007 Rev. 5  
BAW56WT1/D  

与SBAW56WT1G相关器件

型号 品牌 获取价格 描述 数据表
SBB BL Galaxy Electrical

获取价格

SURFACE MOUNT RECTIFIER
SBB-1000 RFMD

获取价格

50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
SBB-1089 SIRENZA

获取价格

50-850MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
SBB1089Z RFMD

获取价格

50MHz to 850MHz CASCADABLE
SBB-1089Z SIRENZA

获取价格

50-850MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
SBB1089ZPCK1 RFMD

获取价格

50MHz to 850MHz CASCADABLE
SBB1089ZSQ RFMD

获取价格

50MHz to 850MHz CASCADABLE
SBB1089ZSR RFMD

获取价格

50MHz to 850MHz CASCADABLE
SBB136 ETC

获取价格

136 PTS SOLDER-IN BREADBOARD (EX
SBB-16-14 MOLEX

获取价格

Perma-Seal™ Butt Splice for 14-16 AWG Wire