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SBB2089Z PDF预览

SBB2089Z

更新时间: 2024-01-06 23:52:22
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
7页 456K
描述
50MHz to 850MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

SBB2089Z 数据手册

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SBB2089Z  
50MHz to 850MHz, CASCADABLE  
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER  
Package: SOT-89  
Product Description  
Features  
RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier uti-  
lizing a Darlington configuration with an active bias network. The active  
bias network provides stable current over temperature and process Beta  
variations. Designed to run directly from a 5V supply, the SBB2089Z does  
not require a dropping resistor as compared to typical Darlington amplifi-  
ers. The SBB2089Z product is designed for high linearity 5V gain block  
applications that require small size and minimal external components. It is  
internally matched to 50.  
OIP =42.8dBm at 240MHz  
3
P
=20.8dBm at 500MHz  
1dB  
Single Fixed 5V Supply  
Robust 2000V ESD, Class 2  
Patented Thermal Design and  
Bias Circuit  
Optimum Technology  
Low Thermal Resistance  
Gain and Return Loss versus Frequency  
(w/ App. Ckt.)  
Matching® Applied  
GaAs HBT  
30.0  
20.0  
10.0  
0.0  
Applications  
GaAs MESFET  
InGaP HBT  
S21  
Receiver IF Amplifier  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Cellular, PCS, GSM, UMTS  
Wireless Data, Satellite Termi-  
nals  
-10.0  
-20.0  
-30.0  
-40.0  
-50.0  
S11  
S11  
Si BJT  
S21  
S22  
S22  
GaN HEMT  
InP HBT  
50.0 150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0  
Frequency (MHz)  
RF MEMS  
LDMOS  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
20.0  
20.0  
20.0  
20.0  
20.0  
21.0  
41.0  
43.0  
41.0  
50 to 850  
20.0  
14.0  
2.7  
Max.  
Small Signal Gain  
dB  
dB  
dB  
70MHz  
240MHz  
400MHz  
70MHz  
240MHz  
400MHz  
70MHz  
240MHz  
18.5  
18.5  
21.5  
21.5  
Output Power at 1dB Compression  
Third Order Intercept Point  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
MHz  
dB  
18.5  
39.0  
400MHz  
Return Loss  
Minimum 10dB  
70MHz to 5000MHz  
70MHz to 5000MHz  
500MHz  
Input Return Loss  
Output Return Loss  
Noise Figure  
15.0  
11.0  
dB  
dB  
3.7  
Reverse Isolation  
Thermal Resistance  
Device Operating Voltage  
Device Operating Current  
22.0  
48.8  
5.0  
dB  
°C/W  
V
70MHz to 5000MHz  
junction - lead  
5.3  
98.0  
82.0  
90.0  
mA  
Test Conditions: V =5V, I =90mA Typ., OIP Tone Spacing=1MHz, P  
per tone=0dBm, T =25°C, Z =Z =50, Tested with Bias Tees  
L S L  
D
D
3
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS130718  
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