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SBB-2000 PDF预览

SBB-2000

更新时间： 2024-02-27 02:07:45
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
6页 204K
描述
50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

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中文翻译

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SBB-2000 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
射频/微波设备类型：WIDE BAND MEDIUM POWERBase Number Matches：1

SBB-2000 数据手册

 浏览型号SBB-2000的Datasheet PDF文件第2页浏览型号SBB-2000的Datasheet PDF文件第3页浏览型号SBB-2000的Datasheet PDF文件第4页浏览型号SBB-2000的Datasheet PDF文件第5页浏览型号SBB-2000的Datasheet PDF文件第6页 
SBB-2000  
50MHz to  
1000MHz,  
Cascadable  
Active Bias  
InGaP HBT  
MMIC Ampli-  
fier  
Preliminary  
SBB-2000  
50MHZ TO 1000MHZ, CASCADABLE ACTIVE  
BIAS InGaP HBT MMIC AMPLIFIER  
Package: Bare Die  
Product Description  
Features  
RFMD’s SBB-2000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington con-  
figuration with an active bias network. The active bias network provides stable current over tem-  
ꢀ
OIP3=42.5dBm @ 250MHz  
perature and process Beta variations. Its efficient operation from a single 5V supply and its ꢀP1dB=21.5dBm @ 500MHz  
compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applica-  
tions. It is well-suited for high linearity 5V gain block applications and it is internally matched to  
50Ω.  
ꢀ
Single Fixed 5V Supply  
ꢀ
Compact Die Size  
(0.59mmx0.70mm)  
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Die  
can be delivered at the wafer level or picked to gel or waffle paks.  
ꢀ
ꢀ
Patented Thermal Design and  
Bias Circuit  
Gain and Return Loss versus Frequency  
VS=5V, IS=90mA  
Optimum Technology  
Matching® Applied  
Low Thermal Resistance  
30.0  
20.0  
10.0  
0.0  
GaAs HBT  
Applications  
GaAs MESFET  
GSG Probe Data with Bias Tees  
ZS=ZL=50 Ohms, T=25°C  
ꢀ
PA Driver Amp  
InGaP HBT  
ꢁ
ꢀ
RF Pre-driver and RF Receive  
Path  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
-10.0  
-20.0  
-30.0  
-40.0  
ꢀ
ꢀ
Military Communications  
Test and Instrumentation  
IRL  
Gain  
ORL  
Si BJT  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
GaN HEMT  
RF MEMS  
Frequency (GHz)  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
50  
Max.  
1000  
Frequency of Operation  
Small Signal Gain  
MHz  
dB  
dB  
20.0  
20.0  
19.5  
22.5  
21.5  
20.0  
42.5  
Freq=250MHz  
Freq=500MHz  
Freq=1000MHz  
Freq=250MHz  
Freq=500MHz  
Freq=1000MHz  
Freq=250MHz  
dB  
Output Power at 1dB Compression  
dBm  
dBm  
dBm  
dBm  
Output IP  
3
39.5  
34.5  
30.0  
14.5  
90  
dBm  
dBm  
dB  
dB  
mA  
Freq=500MHz  
Freq=1000MHz  
Freq=500MHz  
Freq=500MHz  
Input Return Loss  
Output Return Loss  
Current  
Noise Figure  
3.0  
dB  
Freq=500MHz  
Thermal Resistance  
48.8  
°C/W  
Junction to lead (89 pkg)  
Test Conditions: V =5V, I =90mA, T=25°C, OIP3 Tone Spacing=1MHz, P /tone=0dBm. GSG Probe Data with Bias Tees.  
D
D
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
EDS-106099 Rev A  
1 of 6  
123456

中文翻译

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