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SBB-1089Z

更新时间: 2024-01-31 16:40:58
品牌 Logo 应用领域
SIRENZA 放大器射频微波
页数 文件大小 规格书
6页 134K
描述
50-850MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier

SBB-1089Z 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred包装说明:TO-243
Reach Compliance Code:unknown风险等级:3.52
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:14 dB
最大输入功率 (CW):12 dBmJESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:3最大工作频率:850 MHz
最小工作频率:50 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TO-243电源:5 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:98 mA表面贴装:YES
技术:GAAS端子面层:Matte Tin (Sn)
Base Number Matches:1

SBB-1089Z 数据手册

 浏览型号SBB-1089Z的Datasheet PDF文件第2页浏览型号SBB-1089Z的Datasheet PDF文件第3页浏览型号SBB-1089Z的Datasheet PDF文件第4页浏览型号SBB-1089Z的Datasheet PDF文件第5页浏览型号SBB-1089Z的Datasheet PDF文件第6页 
Preliminary  
SBB-1089  
SBB-1089Z  
50 - 850 MHz, Cascadable  
RoHS Compliant  
& Green Package  
Pb  
Product Description  
Sirenza Microdevices’ SBB-1089 is a high performance InGaP HBT MMIC  
amplifier utilizing a Darlington configuration with an active bias network.  
The active bias network provides stable current over temperature and  
process Beta variations. Designed to run directly from a 5V supply, the  
SBB-1089 does not require a dropping resistor as compared to typical  
Darlington amplifiers. The SBB-1089 product is designed for high linearity  
5V gain block applications that require small size and minimal external  
components. It is internally matched to 50 ohms.  
Active Bias InGaP/GaAs HBT MMIC Amplifier  
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing  
process to mitigate tin whisker formation and is RoHS compliant per EU  
Directive 2002/95. This package is also manufactured with green molding  
compounds that contain no antimony trioxide nor halogenated fire retardants.  
Product Features  
Available in Lead Free, RoHS compliant, & Green packaging  
IP3 = 43.1 dBm @ 240MHz  
Gain & Return Loss vs. Frequency (w/ App. Ckt.)  
P1dB = 19.6 dBm @ 500MHz  
35  
Single Fixed 5V Supply  
Robust 1000V ESD, Class 1C  
Patented Thermal Design & Patent Pending Bias Circuit  
25  
S21  
15  
Low Thermal Resistance  
MSL 1 moisture rating  
5
-5  
S11  
-15  
Applications  
Receiver IF Amplifier  
-25  
S22  
Cellular, PCS, GSM, UMTS  
Wireless Data, Satellite Terminals  
-35  
50  
150  
250  
350  
450  
550  
650  
750  
850  
Frequency (MHz)  
Symbol  
Parameters  
Units  
Frequency  
Min.  
Typ.  
Max.  
70 MHz  
240 MHz  
400 MHz  
15.5  
15.5  
15.5  
S21  
Small Signal Gain  
dB  
14  
17  
70 MHz  
240 MHz  
400 MHz  
19  
19  
19  
P1dB  
Output Power at 1dB Compression  
Third Order Intercept Point  
dBm  
dBm  
18  
70 MHz  
240 MHz  
400 MHz  
42  
43  
41  
IP3  
41.5  
S11, S22: Minimum 10dB Return Loss (typ.)  
Input Return Loss  
Bandwidth  
MHz  
dB  
50 - 850  
18  
S11  
S22  
S12  
NF  
VD  
ID  
70 -500MHz  
70 -500MHz  
70 -500MHz  
500 MHz  
Output Return Loss  
dB  
16  
Reverse Isolation  
dB  
18  
Noise Figure  
dB  
3.2  
5
4.2  
5.3  
98  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance (junction - lead)  
V
mA  
°C/W  
82  
90  
R
TH, j-l  
97  
Test Conditions:  
VD = 5V  
ID = 90mA Typ.  
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm  
Tested with Bias Tees  
TL = 25°C  
ZS = ZL = 50 Ohms  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-103998 Rev B  

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