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SBAV70WT1G PDF预览

SBAV70WT1G

更新时间: 2023-06-19 14:32:26
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管整流二极管
页数 文件大小 规格书
5页 56K
描述
100 V 双共阴极开关二极管

SBAV70WT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-70包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:1.43
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.5 A
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
参考标准:AEC-Q101最大重复峰值反向电压:100 V
最大反向恢复时间:0.006 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SBAV70WT1G 数据手册

 浏览型号SBAV70WT1G的Datasheet PDF文件第2页浏览型号SBAV70WT1G的Datasheet PDF文件第3页浏览型号SBAV70WT1G的Datasheet PDF文件第4页浏览型号SBAV70WT1G的Datasheet PDF文件第5页 
BAV70WT1  
Preferred Device  
Dual Switching Diode  
Common Cathode  
Features  
Pb−Free Package is Available  
http://onsemi.com  
ANODE  
1
3
CATHODE  
2
ANODE  
MAXIMUM RATINGS (TA = 25°C)  
Rating  
Symbol  
Max  
70  
Unit  
V
Reverse Voltage  
Forward Current  
V
I
R
MARKING  
DIAGRAM  
200  
500  
mA  
mA  
F
Peak Forward Surge Current  
I
3
FM(surge)  
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to  
stresses above the Recommended Operating Conditions may affect device  
reliability.  
SOT−323  
CASE 419  
STYLE 5  
A4 MG  
G
1
2
1
2
THERMAL CHARACTERISTICS  
A4  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
(Note 1)  
P
200  
mW  
D
(Note: Microdot may be in either location)  
T = 25°C  
Derate above 25°C  
A
1.6  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
625  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Total Device Dissipation  
P
300  
mW  
D
Alumina Substrate (Note 2) T = 25°C  
Derate above 25°C  
A
BAV70WT1  
SOT−323  
3000/Tape & Reel  
3000/Tape & Reel  
2.4  
mW/°C  
°C/W  
BAV70WT1G  
SOT−323  
(Pb−Free)  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
417  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage Temperature  
T , T  
55 to  
+150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
Publication Order Number:  
1
January, 2007 − Rev. 4  
BAV70WT1/D  
 

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