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SBAV70LT3 PDF预览

SBAV70LT3

更新时间: 2024-01-03 01:26:33
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
4页 52K
描述
0.2A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, CASE 318-08, 3 PIN

SBAV70LT3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:1.23
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.225 W参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向恢复时间:0.006 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

SBAV70LT3 数据手册

 浏览型号SBAV70LT3的Datasheet PDF文件第2页浏览型号SBAV70LT3的Datasheet PDF文件第3页浏览型号SBAV70LT3的Datasheet PDF文件第4页 
BAV70LT1  
Preferred Device  
Dual Switching Diode  
Common Cathode  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
MAXIMUM RATINGS (EACH DIODE)  
Rating  
Reverse Voltage  
Symbol  
Value  
70  
Unit  
V
ANODE  
1
V
R
3
CATHODE  
Forward Current  
I
200  
500  
mA  
mA  
F
2
ANODE  
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
FM(surge)  
Symbol  
Max  
Unit  
3
SOT−23 (TO−236)  
CASE 318  
Total Device Dissipation FR5 Board  
(Note 1)  
P
225  
mW  
D
1
STYLE 9  
T = 25°C  
A
2
1.8  
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
556  
MARKING DIAGRAM  
Total Device Dissipation  
Alumina Substrate,  
P
300  
mW  
D
(Note 2) T = 25°C  
Derate above 25°C  
A
A4 M G  
2.4  
mW/°C  
°C/W  
G
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
417  
1
A4  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
Junction and Storage Temperature  
T , T  
55 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
(Note: Microdot may be in either location)  
*Date Code orientation and overbar may vary  
depending upon manufacturing location.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAV70LT1  
SOT−23  
3000 / Tape & Reel  
3000 / Tape & Reel  
BAV70LT1G  
SOT−23  
(Pb−Free)  
BAV70LT3  
SOT−23  
10,000 / Tape & Reel  
10,000 / Tape & Reel  
BAV70LT3G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 4  
BAV70LT1/D  
 

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