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SBAT54T1G PDF预览

SBAT54T1G

更新时间: 2023-06-19 14:31:31
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管整流二极管
页数 文件大小 规格书
4页 55K
描述
肖特基势垒二极管

SBAT54T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.48配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.6 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.4 W参考标准:AEC-Q101
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SBAT54T1G 数据手册

 浏览型号SBAT54T1G的Datasheet PDF文件第2页浏览型号SBAT54T1G的Datasheet PDF文件第3页浏览型号SBAT54T1G的Datasheet PDF文件第4页 
BAT54T1  
Preferred Device  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
http://onsemi.com  
Features  
Extremely Fast Switching Speed  
30 VOLT  
SCHOTTKY BARRIER  
DETECTOR AND SWITCHING  
DIODES  
Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc  
F
Pb−Free Package is Available  
1
2
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
CATHODE  
ANODE  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V
30  
V
R
Forward Power Dissipation, FR−5 Board  
(Note 1)  
P
F
@ T = 25°C  
A
400  
3.2  
mW  
mW/°C  
SOD−123  
CASE 425  
STYLE 1  
Derate above 25°C  
2
Thermal Resistance,  
Junction−to−Case  
R
JL  
174  
°C/W  
1
Thermal Resistance,  
Junction−to−Ambient  
R
JA  
492  
°C/W  
Forward Current (DC)  
I
200 Max  
600  
mA  
mA  
F
MARKING DIAGRAM  
Non−Repetitive Peak Forward Current  
I
FSM  
t < 10 msec  
p
Repetitive Peak Forward Current  
Pulse Wave = 1 sec, Duty Cycle = 66%  
I
300  
mA  
FRM  
SBM G  
1
G
Junction Temperature  
T
55 to 125  
°C  
°C  
J
Storage Temperature Range  
T
55 to +150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
SB  
M
G
= Device Code  
= Date Code  
= Pb−Free Package  
(Note: Microdot may be in either location)  
1. FR-5 = 1.0 x 0.75 x 0.062 in.  
ORDERING INFORMATION  
Device  
BAT54T1  
Package  
Shipping  
SOD−123  
3000 / Tape & Reel  
3000 / Tape & Reel  
BAT54T1G  
SOD−123  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005 − Rev. 8  
BAT54T1/D  
 

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