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SBAS21DW5T1G PDF预览

SBAS21DW5T1G

更新时间: 2024-12-01 12:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关光电二极管高压
页数 文件大小 规格书
6页 110K
描述
High Voltage Switching Diode

SBAS21DW5T1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-70包装说明:SC-88A, SC-70, 5 PIN
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:8 weeks风险等级:1.48
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G5
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.625 A元件数量:2
端子数量:5最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.385 W参考标准:AEC-Q101
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SBAS21DW5T1G 数据手册

 浏览型号SBAS21DW5T1G的Datasheet PDF文件第2页浏览型号SBAS21DW5T1G的Datasheet PDF文件第3页浏览型号SBAS21DW5T1G的Datasheet PDF文件第4页浏览型号SBAS21DW5T1G的Datasheet PDF文件第5页浏览型号SBAS21DW5T1G的Datasheet PDF文件第6页 
BAS19L, NSVBAS19L,  
BAS20L, SBAS20L, BAS21L,  
SBAS21L, BAS21DW5,  
SBAS21DW5  
High Voltage  
Switching Diode  
http://onsemi.com  
HIGH VOLTAGE  
SWITCHING DIODE  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
S and NSV Prefixes for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AECQ101 Qualified and PPAP Capable  
SOT23  
3
1
CATHODE  
ANODE  
SC88A  
MAXIMUM RATINGS  
5
1
CATHODE  
ANODE  
Rating  
Symbol  
Value  
Unit  
4
3
Continuous Reverse Voltage  
V
R
Vdc  
CATHODE  
ANODE  
120  
200  
250  
BAS19, NSVBAS19  
BAS20, SBAS20  
BAS21, SBAS21  
MARKING DIAGRAMS  
Repetitive Peak Reverse Voltage  
V
Vdc  
RRM  
3
120  
200  
250  
BAS19, NSVBAS19  
BAS20, SBAS20  
BAS21, SBAS21  
3
Jx M G  
1
G
2
Continuous Forward Current  
I
F
200  
625  
mAdc  
mAdc  
°C  
1
2
SOT23 (TO236)  
CASE 318  
Peak Forward Surge Current  
I
FM(surge)  
Junction and Storage Temperature  
Range  
T , T  
J
55 to  
+150  
stg  
STYLE 8  
5
1
4
Power Dissipation (Note 1)  
Electrostatic Discharge  
P
385  
mW  
V
D
Jx M G  
ESD  
HM < 500  
3
1
SC88A (SOT353)  
G
MM < 400  
V
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in.  
CASE 419A  
x
= P, R, or S  
P
R
S
= BAS19L, NSVBAS19L  
= BAS20L, SBAS20L  
= BAS21L, SBAS21L or  
BAS21DW5, SBAS21DW5  
= Date Code  
M
G
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may vary  
depending upon the manufacturing location.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 Rev. 14  
BAS19LT1/D  
 

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