Datasheet > SB8100F-LF

SB8100F-LF

更新时间： 2024-10-29 19:43:35

品牌	Logo	应用领域
WTE		局域网二极管
页数	文件大小	规格书
4页	62K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220, ROHS COMPLIANT, PLASTIC, ITO-220A, 2 PIN

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SB8100F-LF 数据手册

WTE

POWER SEMICONDUCTORS

SB820F – SB8100F

8.0A SCHOTTKY BARRIER RECTIFIER

Features

ꢀ

Schottky Barrier Chip

ꢀ

Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

ITO-220A

Dim

Min

14.60

9.70

2.55

3.56

13.00

0.30

3.00 Ø

6.30

4.20

2.50

0.36

2.90

4.83

Max

15.40

10.30

2.85

PIN1

4.16

13.80

0.90

3.50 Ø

6.90

Mechanical Data

ꢀ

Case: ITO-220A, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

4.80

ꢀ

2.90

0.80

ꢀ

3.30

5.33

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 +

PIN 3 -

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

820F 830F 840F 845F 850F 860F 880F 8100F

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

V^R

100

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current @T_C= 95°C

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

IFSM

150

Forward Voltage

@I_F= 8.0A

VFM

I^RM

0.55

0.75

0.85

Peak Reverse Current

@T_A= 25°C

0.5

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

700

5.0

°C/W

°C

RθJC

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB820F – SB8100F

1 of 4

12 3 4

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