WTE
POWER SEMICONDUCTORS
Pb
SB8150
8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
B
!
!
!
!
!
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D
TO-220A
C
Dim
A
B
C
D
E
Min
13.90
9.80
2.54
3.56
12.70
0.51
3.55 Ø
5.75
4.16
2.03
0.30
1.14
4.83
Max
15.90
10.70
3.43
G
F
A
PIN1
3
4.56
14.73
0.96
F
G
H
I
4.09 Ø
6.85
Mechanical Data
!
!
E
Case: TO-220A, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
5.00
P
J
2.92
K
L
0.65
!
!
!
!
!
I
1.40
P
5.33
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 +
PIN 3 -
+
Case
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB8150
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
RMS Reverse Voltage
VR(RMS)
IO
105
8.0
V
A
Average Rectified Output Current
@TC = 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
I
FSM
150
A
Forward Voltage
@IF = 8.0A
VFM
IRM
0.92
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
50
mA
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Cj
700
3.0
pF
°C/W
°C
RꢀJC
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB8150
1 of 4
© 2006 Won-Top Electronics