5秒后页面跳转
SB8150 PDF预览

SB8150

更新时间: 2024-10-29 04:05:43
品牌 Logo 应用领域
WTE 整流二极管高压
页数 文件大小 规格书
4页 48K
描述
8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

SB8150 数据手册

 浏览型号SB8150的Datasheet PDF文件第2页浏览型号SB8150的Datasheet PDF文件第3页浏览型号SB8150的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
SB8150  
8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
Features  
!
Schottky Barrier Chip  
B
!
!
!
!
!
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D  
TO-220A  
C
Dim  
A
B
C
D
E
Min  
13.90  
9.80  
2.54  
3.56  
12.70  
0.51  
3.55 Ø  
5.75  
4.16  
2.03  
0.30  
1.14  
4.83  
Max  
15.90  
10.70  
3.43  
G
F
A
PIN1  
3
4.56  
14.73  
0.96  
F
G
H
I
4.09 Ø  
6.85  
Mechanical Data  
!
!
E
Case: TO-220A, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
5.00  
P
J
2.92  
K
L
0.65  
!
!
!
!
!
I
1.40  
P
5.33  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1 +  
PIN 3 -  
+
Case  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB8150  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
105  
8.0  
V
A
Average Rectified Output Current  
@TC = 95°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
I
FSM  
150  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
0.92  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
50  
mA  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Cj  
700  
3.0  
pF  
°C/W  
°C  
RJC  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal resistance junction to case mounted on heatsink.  
SB8150  
1 of 4  
© 2006 Won-Top Electronics  

与SB8150相关器件

型号 品牌 获取价格 描述 数据表
SB8150CT WTE

获取价格

8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB8150CT PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
SB8150CT WON-TOP

获取价格

Powerpack
SB8150CT-LF WTE

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 150V V(RRM), Silicon, TO-220AB, ROHS CO
SB8150D WTE

获取价格

8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SB8150D PANJIT

获取价格

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
SB8150D WON-TOP

获取价格

SMD
SB8150DC WTE

获取价格

8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB8150DC PANJIT

获取价格

D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SB8150DC WON-TOP

获取价格

SMD