SB8150D-T3

更新时间： 2024-10-29 04:05:43

品牌	Logo	应用领域
WTE		整流二极管瞄准线高压功效
页数	文件大小	规格书
4页	47K
描述
8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB8150D-T3 数据手册

WTE

POWER SEMICONDUCTORS

SB8150D

8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ K

D²PAK/TO-263

Min

Mechanical Data

Dim

Max

10.40

10.60

4.80

9.10

—

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

9.80

9.60

4.40

Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 +

PIN 3 -

8.50

Case

2.80

1.00

1.40

0.90

1.40

0.70

2.75

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SB8150D

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

150

RMS Reverse Voltage

V^R(RMS)

I^O

105

8.0

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 8.0A

V^FM

I^RM

0.92

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

400

3.0

°C/W

°C

R^ꢀ^JC

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB8150D

1 of 4

12 3 4

中文翻译

下载PDF

与SB8150D-T3相关器件

型号	品牌	获取价格	描述	数据表
SB8150D-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, ROHS CO
SB8150F	WTE	获取价格	8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
SB8150F	WON-TOP	获取价格	Powerpack
SB8150FCT	WTE	获取价格	8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB8150FCT	PANJIT	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIERS
SB8150FCT	WON-TOP	获取价格	Powerpack
SB8150FCT_08	WTE	获取价格	8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB8150FCT-LF	WTE	获取价格	暂无描述
SB8150-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-220AC, ROHS CO
SB81C51SL	INTEL	获取价格	Microcontroller, 8-Bit, MROM, 16MHz, CMOS, PQFP100, SQFP-100

与SB8150D-T3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

15
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

18
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

43
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

50

产品中心

服务支持

精选活动

关于我们

帮助中心

SB8150D-T3

SB8150D-T3 数据手册

与SB8150D-T3相关器件

与SB8150D-T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SB8150D-T3

SB8150D-T3 数据手册

与SB8150D-T3相关器件

与SB8150D-T3相关文章

您还可以找

您在本页遇到什么问题？