SB8150FCT

更新时间： 2024-10-29 04:05:43

品牌	Logo	应用领域
WTE		整流二极管高压
页数	文件大小	规格书
4页	48K
描述
8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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SB8150FCT 数据手册

WTE

POWER SEMICONDUCTORS

SB8150FCT

8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

ITO-220

Min

Dim

Max

15.40

10.30

2.85

14.60

9.70

2.55

PIN1

3.56

4.16

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

13.00

0.30

13.80

0.90

3.00 Ø

6.30

3.50 Ø

6.90

Mechanical Data

Case: ITO-220, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

4.20

4.80

2.50

2.90

0.36

0.80

2.90

3.30

2.29

2.79

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 -

PIN 3 -

PIN 2

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

SB8150FCT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

150

RMS Reverse Voltage

V^R(RMS)

I^O

105

8.0

Average Rectified Output Current

@T_C= 95°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

FSM

150

Forward Voltage

@I_F= 4.0A

V^FM

I^RM

0.92

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 1)

C^j

700

°C

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB8150FCT

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12 3 4

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