Datasheet > SB8200FCT

SB8200FCT

更新时间： 2024-02-09 03:34:52

品牌	Logo	应用领域
WTE		高压
页数	文件大小	规格书
4页	55K
描述
8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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SB8200FCT 数据手册

WTE

POWER SEMICONDUCTORS

SB8150FCT – SB8200FCT

8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

Features

ꢀ

Schottky Barrier Chip

ꢀ

Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

ITO-220

Min

Dim

Max

15.40

10.30

2.85

14.60

9.70

2.55

PIN1

3.56

4.16

13.00

0.30

13.80

0.90

3.00 Ø

6.30

3.50 Ø

6.90

Mechanical Data

ꢀ

Case: ITO-220, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

4.20

4.80

ꢀ

2.50

2.90

0.36

0.80

ꢀ

2.90

3.30

2.29

2.79

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 -

PIN 3 -

PIN 2

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

SB8150FCT

SB8200FCT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

V^R

150

105

200

140

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 95°C

8.0

150

0.92

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

IFSM

Forward Voltage

@I_F= 4.0A

VFM

I^RM

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 1)

700

°C

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB8150FCT – SB8200FCT

1 of 4

12 3 4

中文翻译

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